2N1613 Просмотр технического описания (PDF) - Continental Device India Limited
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2N1613 Datasheet PDF : 4 Pages
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NPN SILICON PLANAR EPITAXIAL TRANSISTORS
2N1613
TO-39
Metal Can Package
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
SMALL SIGNAL CHARACTERISTICS
Small Signal Current Gain
Input Impedance
| hfe | IC=1mA, VCE=5V,
30
f=1kHz
IC=5mA, VCE=10V,
35
f=1kHz
hib IC=1mA,VCB=5V,f=1kHz
24
IC=5mA,VCE=10V,f=1kHz
4.0
Voltage Feedback Ratio
hrb IC=1mA,VCE=5V,f=1.0kHz
IC=5mA,VCE=10V,f=1kHz
Output Admittance
hob IC=1mA,VCE=5V,f=1kHz
0.05
IC=5mA,VCE=10V,f=1kHz
0.05
Current Gain Bandwidth Product
Output Capacitance
Input Capacitance
Noise Figure
fT* IC=50mA,VCE=10V,f=20MHz 60
Cob VCB=10V, IE=0, f=100kHz
Cib VEB=0.5V, IC=0, f=100kHz
NF IC=300µA,VCE=10V,RS=510Ω
f=1kHz
*Pulse Test: Pulse Length <300µs, Duty Cycle <1.0%
TYP MAX UNITS
100
150
34
Ω
8.0
Ω
3.0
X10-4
3.0
X10-4
0.5
µmho
0.5
µmho
ΜΗz
10
25
pF
50
80
pF
12
dΒ
Continental Device India Limited
Data Sheet
Page 2 of 4
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