BDX54A Просмотр технического описания (PDF) - Power Innovations
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BDX54A Datasheet PDF : 6 Pages
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BDX54, BDX54A, BDX54B, BDX54C
PNP SILICON POWER DARLINGTONS
MAY 1989 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX
BDX54
-45
Collector-emitter
V(BR)CEO breakdown voltage
IC = -100 mA IB = 0
(see Note 3)
BDX54A
-60
BDX54B
-80
BDX54C
-100
ICEO
Collector-emitter
cut-off current
ICBO
Collector cut-off
current
IEBO
Emitter cut-off
current
VCE = -30 V
VCE = -30 V
VCE = -40 V
VCE = -50 V
VCB = -45 V
VCB = -60 V
VCB = -80 V
VCB = -100 V
VEB = -5 V
IB = 0
IB = 0
IB = 0
IB = 0
IE = 0
IE = 0
IE = 0
IE = 0
IC = 0
BDX54
-0.5
BDX54A
-0.5
BDX54B
-0.5
BDX54C
-0.5
BDX54
-0.2
BDX54A
-0.2
BDX54B
-0.2
BDX54C
-0.2
-2
Forward current
hFE
transfer ratio
VCE = -3 V IC = -3 A
(see Notes 3 and 4)
750
Base-emitter
VBE(sat) saturation voltage
IB = -12 mA IC = -3 A
(see Notes 3 and 4)
-2.5
Collector-emitter
VCE(sat) saturation voltage
IB = -12 mA IC = -3 A
(see Notes 3 and 4)
-2
Parallel diode
VEC forward voltage
IE = -3 A IB = 0
-2.5
NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
mA
mA
mA
V
V
V
thermal characteristics
RθJC
RθJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
2.08 °C/W
62.5 °C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS †
ton
Turn-on time
toff
Turn-off time
IC = -3 A
VBE(off) = 4.2 V
IB(on) = -12 mA
RL = 10 Ω
IB(off) = 12 mA
tp = 20 µs, dc ≤ 2%
† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
MIN TYP MAX UNIT
1
µs
5
µs
PRODUCT INFORMATION
2
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