MJ11011 Просмотр технического описания (PDF) - New Jersey Semiconductor

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MJ11011

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

New Jersey Semiconductor 

MJ11011, MJ11013, MJ11015 PNP / MJ11012, MJ11014, MJ11016 NPN

ELECTRICAL CHARACTERISTICS ( Tc = 25°C unless othenMse noted )

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector - Emitter Sustaining Voltage (1)

VCE<X«us)

(lc=100mA.IB = 0)

MJ1 101 1,MJ1 1012

60

MJ1 101 3.MJ1 1014

90

MJ11015.MJ11016

120

Collector Cutoff Current

ICEO

(VCB = 50V, l. = 0.0)

Collector-Emitter Leakage Current

(Vel = 60V,RM=1.0k ohm )

'CER

MJ1 101 1.MJ1 1012

(Vei = 90V,RM=1.0k ohm )

MJ11013.MJ11014

( V = 1 2 0 V , R i B = 1.0k ohm )

MJ11015.MJ11016

( V = 60 V,R = 1.0k ohm ,Te = 125°C ) MJ1 101 1.MJ1 1012

(Ves = 90V,RiI=1.0kohm,Te=125°C) MJ11013.MJ11014

(VeB = 120 V,R,B = 1.0k ohm,Te =125°C ) MJ11015,MJ11016

Emitter Cutoff Current

IEBO

(VEB = 5.0V,IC=0 )

V

mA

1.0

mA

1.0

1.0

1.0

5.0

5.0

5.0

mA

5.0

ON CHARACTERISTICS (1)

DC Current Gain

(IC = 20A,VCS = 5.0V)

(IC=30A,VC1 = 5.0V)

Collector-Emitter Saturation Voltage

(lc = 20A,l. = 200mA)

(lc = 30AI. = 300mA)

Base-Emitter Saturation Voltage

( lc = 20 A, I, = 200 mA )

{ lc = 30 A, I, = 300 mA ) )

hFE

1000

200

VCE,-*

V

3.0

4.0

VBE(«D

V

3.5

5.0

DYNAMIC CHARACTERISTICS

Small-Signal Current Gain

(lc = 10A,Vce = 3.0V,f =1.0 MHz)

M

4.0

(1) Pulse Test Pulse width - 300 us , Duty Cycle ^ 2.0%

(2)fT= n,. -In

NPN

MJ11011

MJ11013

MJ11015

INTERNAL SCHEMATIC DIAGRAM

Co 11 act e»f

PNP

MJ11012

MJ11014

MJ11016

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