2SC1623 Просмотр технического описания (PDF) - Jiangsu High diode Semiconductor Co., Ltd
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Компоненты Описание
производитель
2SC1623 Datasheet PDF : 4 Pages
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Typical Characteristics
4
3
2
1
0
0
2000
Static Characteristic
10uA
9uA
8uA
COMMON
EMITTER
Ta=25℃
7uA
6uA
5uA
4uA
3uA
2uA
IB=1uA
2
4
6
8
COLLECTOR-EMITTER VOLTAGE VCE (V)
V —— I
BEsat
C
1000
Ta=25℃
Ta=100 ℃
100
0.1
100
1
10
COLLECTOR CURREMT IC (mA)
I —— V
C
BE
β=10
100
h —— I
1000
FE
C
Ta=100℃
Ta=25℃
100
10
0.1
300
COMMON EMITTER
VCE= 6V
1
10
100
COLLECTOR CURRENT IC (mA)
V
—— I
CEsat
C
100
Ta=100 ℃
Ta=25℃
10
0.1
1000
1
10
COLLECTOR CURREMT IC (mA)
f —— I
T
C
β=10
100
10
1
0.1
0.0
50
10
1
0.1
0.1
100
COMMON EMITTER
VCE=6V
0.3
0.6
0.9
1.2
BASE-EMMITER VOLTAGE VBE (V)
C /C ——
ob ib
V /V
CB EB
f=1MHz
IE=0/IC=0
Ta=25 ℃
Cib
Cob
10
1
250
200
150
100
COMMON EMITTER
VCE=6V
Ta=25℃
10
70
COLLECTOR CURRENT IC (mA)
P —— T
C
a
50
1
REVERSE VOLTAGE V (V)
10
20
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE Ta (℃)
High Diode Semiconductor
2
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