MDF11N65B Просмотр технического описания (PDF) - MagnaChip Semiconductor
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Компоненты Описание
производитель
MDF11N65B Datasheet PDF : 6 Pages
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10
※ Note : ID = 12.0A
8
6
130V
325V
520V
4
2
0
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34
QG, Total Gate Charge [nC]
Fig.7 Gate Charge Characteristics
2800
Coss
2400
Ciss
2000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
1600
1200
Crss
800
400
※ Notes ;
1. VGS = 0 V
2. f = 1 MHz
0
1
10
VDS, Drain-Source Voltage [V]
Fig.8 Capacitance Characteristics
102
Operation in This Area
is Limited by R DS(on)
10 µs
101
100 µs
1 ms
10 ms
100 ms
DC
100
10-1
Single Pulse
TJ=Max rated
TC=25℃
10-2
10-1
100
101
102
VDS, Drain-Source Voltage [V]
Fig.9 Maximum Safe Operating Area
D=0.5
100
0.2
0.1
0.05
0.02
10-1
0.01
single pulse
※ Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC
RΘ JC=2.52℃/W
10-5
10-4
10-3
10-2
10-1
100
101
t1, Rectangular Pulse Duration [sec]
Fig.10 Transient Thermal Response Curve
6000
single Pulse
5000
RthJC = 2.52℃/W
TC = 25℃
4000
3000
2000
1000
0
1E-5
1E-4
1E-3
0.01
0.1
1
10
Pulse Width (s)
Fig.11 Single Pulse Maximum Power
Dissipation
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
25
50
75
100
125
150
TC, Case Temperature [℃]
Fig.12 Maximum Drain Current vs. Case
Temperature
Aug 2011 Version 1.1
4
MagnaChip Semiconductor Ltd.
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