MDF11N65B Просмотр технического описания (PDF) - MagnaChip Semiconductor
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MDF11N65B Datasheet PDF : 6 Pages
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Ordering Information
Part Number
MDF11N65BTH
Temp. Range
-55~150oC
Package
TO-220F
Packing
Tube
RoHS Status
Halogen Free
Electrical Characteristics (Ta =25oC)
Characteristics
Symbol
Test Condition
Min
Static Characteristics
Drain-Source Breakdown Voltage
BVDSS
ID = 250µA, VGS = 0V
650
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250µA
2.0
Drain Cut-Off Current
IDSS
VDS = 650V, VGS = 0V
-
Gate Leakage Current
IGSS
VGS = ±30V, VDS = 0V
-
Drain-Source ON Resistance
RDS(ON)
VGS = 10V, ID = 6A
Forward Transconductance
gfs
VDS = 30V, ID = 6A
-
Dynamic Characteristics
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Turn-On Delay Time
Qg
Qgs
Qgd
Ciss
Crss
Coss
td(on)
-
VDS = 520V, ID = 12.0A, VGS = 10V(3)
-
-
-
VDS = 25V, VGS = 0V, f = 1.0MHz
-
-
-
Rise Time
Turn-Off Delay Time
tr
VGS = 10V, VDS = 325V, ID = 12.0A,
-
td(off)
RG = 25Ω(3)
-
Fall Time
tf
-
Drain-Source Body Diode Characteristics
Maximum Continuous Drain to
Source Diode Forward Current
IS
-
Source-Drain Diode Forward Voltage
VSD
IS = 12.0A, VGS = 0V
-
Body Diode Reverse Recovery Time
trr
-
IF = 12.0A, di/dt = 100A/µs
Body Diode Reverse Recovery Charge
Qrr
-
Note :
1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C.
2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C.
3. ISD ≤12.0A, di/dt≤200A/us, VDD≤BVdss, Rg =25Ω, Starting TJ=25°C
4. L=9.62mH, IAS=12.0A, VDD=50V, Rg =25Ω, Starting TJ=25°C,
Typ
-
-
-
-
0.55
8.7
31
9.2
12.6
1650
7.7
180
27
52
132
48
12
-
355
3.6
Max Unit
-
V
4.0
1
µA
100
nA
0.65
Ω
-
S
-
-
nC
-
-
-
pF
-
-
-
ns
-
-
-
A
1.4
V
-
ns
-
µC
Aug 2011 Version 1.1
2
MagnaChip Semiconductor Ltd.
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