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2SJ576 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
Номер в каталоге
Компоненты Описание
производитель
2SJ576
Silicon P Channel MOS FET High Speed Switching
Hitachi -> Renesas Electronics
2SJ576 Datasheet PDF : 5 Pages
1
2
3
4
5
2SJ576
Silicon P Channel MOS FET
High Speed Switching
Features
•
Low on-resistance
R
DS
=2.8
Ω
typ. (V
GS
= -10 V , I
D
= -50 mA)
R
DS
=5.7
Ω
typ. (V
GS
= -4 V , I
D
= -50 mA)
•
4 V gate drive device.
•
Small package (CMPAK)
Outline
ADE-208-741B (Z)
3rd.Edition.
June 1999
CMPAK
D
3
2
G
1
S
3
1
2
1. Source
2. Gate
3. Drain
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