2SA1700 Просмотр технического описания (PDF) - SHENZHEN YONGERJIA INDUSTRY CO.,LTD

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производитель

2SA1700

TRANSISTOR (NPN)

SHENZHEN YONGERJIA INDUSTRY CO.,LTD 

RoHS

2SA1700

2SA1700 TRANSISTOR (NPN)

D FEATURES

Power dissipation

T PCM : 1 W (Tamb=25℃)

.,L Collector current

ICM : -200 mA

Collector-base voltage

O V(BR)CBO : -400 V

Operating and storage junction temperature range

C TJ, Tstg: -55℃ to +150℃

TO-251

1. BASE

2. COLLECTOR

3. EMITTER

123

IC ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

N Parameter

Collector-base breakdown voltage

O Collector-emitter breakdown voltage

R Emitter-base breakdown voltage

T Collector cut-off current

C Emitter cut-off current

DC current gain

E Collector-emitter saturation voltage

L Base-emitter saturation voltage

E Transition frequency

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

IEBO

hFE(1)

VCE(sat)

VBE(sat)

fT

Test conditions

Ic=-10µA, IE=0

Ic=-1mA, IB=0

IE=-10µA, IC=0

VCB=-300V, IE=0

VEB=-4V, IC=0

VCE=-10V, IC=-50mA

IC=-50mA, IB=-5mA

IC=-50mA, IB=-5mA

VCE=-30V, IC=-10mA

MIN TYP MAX UNIT

-400

V

-400

V

-5

V

-0.1 µA

-0.1 µA

60

200

-0.6 V

-1

V

70

MHz

J CLASSIFICATION OF hFE(1)

ERank

WRange

D

60-120

E

100-200

WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com

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