D2395 Просмотр технического описания (PDF) - Foshan Blue Rocket Electronics Co.,Ltd.

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Компоненты Описание

производитель

D2395

Silicon NPN transistor in a TO-220F Plastic Package

Foshan Blue Rocket Electronics Co.,Ltd. 

2SD2395

Rev.E Mar.-2016

DATA SHEET

极限参数 / Absolute Maximum Ratings(Ta=25℃)

参数

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current - Continuous

Collector Power Dissipation

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

符号

Symbol

VCBO

VCEO

VEBO

IC

PC

PC(TC=25℃ )

Tj

Tstg

数值

Rating

60

50

5.0

3.0

2.0

25

150

-55～150

单位

Unit

V

V

V

A

W

W

℃

℃

电性能参数 / Electrical Characteristics(Ta=25℃)

参数

Parameter

Collector to Base Breakdown

Voltage

Collector to Emitter Breakdown

Voltage

符号

Symbol

测试条件

Test Conditions

VCBO IC=50μA

VCEO IC=1.0mA

Emitter to Base Breakdown Voltage VEBO IE=50μA

Collector Cut-Off Current

ICBO VCB=40V IE=0

Emitter Cut-Off Current

IEBO VEB=4.0V IC=0

DC Current Gain

Collector to Emitter Saturation

Voltage

hFE VCE=5.0V

VCE(sat) IC=2.0A

IC=500mA

IB=0.2A

Base to Emitter Saturation Voltage VBE(sat) IC=2.0A

IB=0.2A

Transition Frequency

Collector output capacitance

fT VCE=5.0V IC=500mA

Cob

VCB=10V

f=1.0MHz

IE=0

最小值 典型值 最大值 单位

Min Typ Max Unit

60

V

50

V

5.0

V

1.0 μA

1.0 μA

100

320

1.0 V

1.5 V

100

MHz

35

pF

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