2SA1585SR Просмотр технического описания (PDF) - ROHM Semiconductor

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Компоненты Описание

производитель

2SA1585SR

Low VCE(sat) Transistor (−20V, −3A)

ROHM Semiconductor 

Transistors

2SB1424 / 2SA1585S

Low VCE(sat) Transistor (−20V, −3A)

2SB1424 / 2SA1585S

zFeatures

1) Low VCE(sat).

VCE(sat) = −0.2V (Typ.)

(IC/IB = −2A / −0.1A)

2) Excellent DC current gain characteristics.

3) Complements the 2SD2150 / 2SC4115S.

zStructure

Epitaxial planar type

PNP silicon transistor

zExternal dimensions (Unit : mm)

2SB1424

4.5+−00..12

1.6±0.1

1.5±0.1

2SA1585S

4±0.2

2±0.2

(1) (2) (3)

0.4±0.1

1.5±0.1

0.5±0.1

3.0±0.2

0.4±0.1

1.5±0.1

0.4−+00..015

ROHM : MPT3

EIAJ : SC-62

(1) Base

(2) Collector

(3) Emitter

∗ Denotes hFE

∗ Abbreviated symbol: AE

0.45+−00..0155

2.5+−00..14

5

0.5

0.45

+0.15

−0.05

(1) (2) (3)

ROHM : SPT

EIAJ : SC-72

(1) Emitter

(2) Collector

(3) Base

zAbsolute maximum ratings (Ta=25°C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

2SB1424

Collector current 2SA1585S

Symbol

VCBO

VCEO

VEBO

IC

ICP

Collector power 2SB1424

dissipation

2SA1585S

Junction temperature

Storage temperature

∗ Single pulse Pw=10ms

PC

Tj

Tstg

Limits

−20

−20

−6

−3

−2

−5

0.5

0.4

150

−55 to 150

Unit

V

V

V

A

A(Pulse) ∗

W

°C

°C

Rev.A

1/3

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