75N75 Просмотр технического описания (PDF) - Inchange Semiconductor
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75N75 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
isc Product Specification
75N75
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
VSD
Diode Forward On-Voltage
VGS= 0; ID=1mA
VDS= VGS; ID=250µA
IS=48A ;VGS= 0
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
VGS= 10V; ID=40A
VGS= ±30V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 75V; VGS= 0
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
VDS=25V;
VGS=0V;
fT=1MHz
tr
Rise Time
td(on)
Turn-on Delay Time
tf
Fall Time
VGS=10V;
ID=48A;
VDD=38V;
td(off)
Turn-off Delay Time
MIN TYPE MAX UNIT
75
V
2.0
4.0
V
1.4
V
0.03
Ω
±100 nA
20
µA
3300
80
pF
530
79
12
ns
52
80
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