75N75 Просмотр технического описания (PDF) - Inchange Semiconductor
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75N75 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
75N75
·DESCRIPTION
·Drain Current ID= 75A@ TC=25℃
·Drain Source Voltage-
: VDSS= 75V(Min)
·Fast Switching Speed
·APPLICATIONS
·General purpose power amplifier
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
75
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-continuous@ TC=25℃
75
A
ID(puls)
Pulse Drain Current
300
A
Ptot
Total Dissipation@TC=25℃
220
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
0.8 ℃/W
62.5 ℃/W
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