75N75(2005) Просмотр технического описания (PDF) - Unisonic Technologies

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производитель

75N75
(Rev.:2005)

75Amps, 75Volts N-CHANNEL POWER MOSTFET

Unisonic Technologies 

75N75

ELECTRICAL CHARACTERISTICS(Cont.)

PARAMETER

SYMBOL

TEST CONDITIONS

Source-Drain Diode Ratings and Characteristics

Continuous Source Current

IS

Pulsed Source Current

ISM

Diode Forward Voltage

VSD IS = 48A, VGS = 0 V

Reverse Recovery Time

Reverse Recovery Charge

trr IS = 48A, VGS = 0 V

Qrr dIF / dt = 100 A/µs

Note 1. Repeativity rating: pulse width limited by junction temperature

2. L=0.24mH, IAS=48A, RG=20Ω, Starting TJ=25℃

3. ISD≤48A, di/dt≤300A/µs, VDD≤BVDSS, Starting TJ=25℃

4. Pulse Test: Pulse Width≤300µs,Duty Cycle≤2%

5. Essentially independent of operating temperature.

Power MOSFET

MIN TYP MAX UNIT

75

A

300

1.4

V

90

ns

300

µC

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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QW-R502-097,A

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