MC34164D-3 Просмотр технического описания (PDF) - ON Semiconductor
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MC34164D-3 Datasheet PDF : 14 Pages
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MC34164, MC33164, NCV33164
Power
Supply
RH
Iin
Vin
1.2 Vref
MC3X164−5 GND
RL
Reset
Microprocessor
Circuit
4.3 RH
VH ≈
+ 0.06
RL
DVth(lower) ≈ 10 RH x 10 − 6
where: RH ≤ 1.0 kW
43 kW ≥ RL ≥ 4.3 kW
VH
(mV)
60
103
123
160
155
199
280
262
306
357
421
530
Test Data
DVth
RH
(mV) (W)
0
0
1.0
100
1.0
100
1.0
100
2.2
220
2.2
220
2.2
220
4.7
470
4.7
470
4.7
470
4.7
470
4.7
470
RL
(kW)
43
10
6.8
4.3
10
6.8
4.3
10
8.2
6.8
5.6
4.3
Comparator hysteresis can be increased with the addition of resistor RH. The hysteresis equation has been simplified and does not account for the change of input current
Iin as Vin crosses the comparator threshold (Figure 8). An increase of the lower threshold DVth(lower) will be observed due to Iin which is typically 10 mA at 4.3 V. The
equations are accurate to ±10% with RH less than 1.0 kW and RL between 4.3 kW and 43 kW.
Figure 15. Low Voltage Microprocessor Reset With Additional Hysteresis
(MC3X164−5 Shown)
Power
Supply
Input
1.2 Vref
GND
1.0 k
Reset
Input
1.2 Vref
GND
Reset
Solar
Cells
Figure 16. Voltage Monitor
Figure 17. Solar Powered Battery Charger
VCC
RL
270
MTP3055EL
4.3V
Input
1.2 Vref
Reset
Overheating of the logic level power MOSFET due to insufficient
gate voltage can be prevented with the above circuit. When the
input signal is below the 4.3 V threshold of the MC3X164−5, its
output grounds the gate of the L2 MOSFET.
GND MC3X164−5
Figure 18. MOSFET Low Voltage Gate Drive Protection Using the MC3X164−5
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