MDD14N25CRH Просмотр технического описания (PDF) - MagnaChip Semiconductor
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производитель
MDD14N25CRH Datasheet PDF : 6 Pages
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10
※ Note : ID = 14A
8
50V
125V
200V
6
4
2
0
0
2
4
6
8 10 12 14 16 18 20
QG, Total Gate Charge [nC]
Fig.7 Gate Charge Characteristics
102
Operation in This Area
is Limited by R DS(on)
10 s
100 s
101
1 ms
10 ms
100 ms
DC
100
10-1
Single Pulse
TJ=Max rated
TC=25℃
10-2
10-1
100
101
102
VDS, Drain-Source Voltage [V]
Fig.9 Maximum Safe Operating Area
100 D=0.5
0.2
0.1
0.05
10-1
0.02
0.01
10-2
10-5
single pulse
※ Notes :
Duty Factor, D=t1/t2
PEAK
T
J
=
P
DM
*
Zθ
JC*
Rθ
JC(t)
+
T
C
R
Θ
JC=1.8℃
/W
10-4
10-3
10-2
10-1
100
101
t1, Rectangular Pulse Duration [sec]
Fig.11 Transient Thermal Response Curve
1400
1200
1000
Coss
Ciss
C = C + C (C = shorted)
iss
gs
gd ds
Coss = Cds + Cgd
C =C
rss
gd
800
600
400
Crss
200
※ Notes ;
1. V = 0 V
GS
2. f = 1 MHz
0
1
10
VDS, Drain-Source Voltage [V]
Fig.8 Capacitance Characteristics
10
8
6
4
2
0
25
50
75
100
125
150
TC, Case Temperature [℃ ]
Fig.10 Maximum Drain Current vs. Case
Temperature
7000
6000
5000
single Pulse
R
thJC
=
1.8℃
/W
TC = 25℃
4000
3000
2000
1000
0
1E-5
1E-4
1E-3
0.01
0.1
1
10
Pulse Width (s)
Fig.12 Single Pulse Maximum Power
Dissipation
Nov. 2011 Version 1.0
4
MagnaChip Semiconductor Ltd.
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