MDD14N25CRH Просмотр технического описания (PDF) - MagnaChip Semiconductor
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Компоненты Описание
производитель
MDD14N25CRH Datasheet PDF : 6 Pages
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35
Vgs=4.0V
=4.5V
30
=5.0V
=5.5V
25
=6.0V
=6.5V
=7.0V
20
=7.5V
=8.0V
=10.0V
15
=15.0V
=20.0V
10
Notes
5
1. 250㎲ Pulse Test
2. TC=25℃
0
0
5
10
15
V ,Drain-Source Voltage [V]
DS
Fig.1 On-Region Characteristics
3.0
※ Notes :
2.5
1. VGS = 10 V
2. I = 5.1 A
D
2.0
1.5
1.0
0.5
0.0
-50
0
50
100
150
TJ, Junction Temperature [oC]
Fig.3 On-Resistance Variation with
Temperature
0.8
0.7
0.6
0.5
0.4
VGS=10.0V
0.3
VGS=20V
0.2
-5
0
5
10
15
20
25
30
35
I ,Drain Current [A]
D
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
1.2
※ Notes :
1. V = 0 V
GS
2. I = 250㎂
D
1.1
1.0
0.9
0.8
-50
0
50
100
150
T , Junction Temperature [oC]
J
Fig.4 Breakdown Voltage Variation vs.
Temperature
* Notes ;
1. Vds=30V
10
150℃
25℃
-55℃
※ Notes :
1. VGS = 0 V
2.250s Pulse test
10
150℃
25℃
1
3
4
5
6
7
8
9
VGS [V]
Fig.5 Transfer Characteristics
Nov. 2011 Version 1.0
3
1
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source-Drain Voltage [V]
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
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