MDD14N25CRH Просмотр технического описания (PDF) - MagnaChip Semiconductor
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MDD14N25CRH Datasheet PDF : 6 Pages
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MDD14N25C
N-Channel MOSFET 250V, 10.2A, 0.28Ω
General Description
These N-channel MOSFET are produced using advanced
MagnaChip’s MOSFET Technology, which provides low on-
state resistance, high switching performance and excellent
quality.
These devices are suitable device for SMPS, high Speed
switching and general purpose applications.
Features
VDS = 250V
ID = 10.2A
RDS(ON) ≤ 0.28Ω
@ VGS = 10V
Applications
Power Supply
Motor Control
High Current, High Speed Switching
D
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current
Pulsed Drain Current(1)
Power Dissipation
Peak Diode Recovery dv/dt(3)
Repetitive Avalanche Energy(1)
Avalanche current(1)
Single Pulse Avalanche Energy(4)
Junction and Storage Temperature Range
TC=25oC
TC=100oC
TC=25oC
Derivate above 25 oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(1)
Thermal Resistance, Junction-to-Case(1)
Nov. 2011 Version 1.0
1
G
Symbol
VDSS
VGSS
ID
IDM
PD
dv/dt
EAR
IAR
EAS
TJ, Tstg
S
Rating
250
±30
10.2
6.4
40.8
69.4
0.56
4.5
6.94
10.2
550
-55~150
Unit
V
V
A
A
A
W
W/ oC
V/ns
mJ
A
mJ
oC
Symbol
RθJA
RθJC
Rating
110
1.8
Unit
oC/W
MagnaChip Semiconductor Ltd.
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