BTB04-600SL Просмотр технического описания (PDF) - Inchange Semiconductor

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производитель

BTB04-600SL

Triacs

Inchange Semiconductor 

INCHANGE Semiconductor

isc Triacs

isc Product Specification

BTB04-600SL

FEATURES

·With TO-220AB non insulated package

·Suitables for general purpose applications where gate high sensitivity is

required. Application on 4Q such as phase control and static switching.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

MIN

UNIT

VDRM

VRRM

IT(RMS)

ITSM

Tj

Tstg

Rth(j-c)

Rth(j-a)

Repetitive peak off-state voltage

600

V

Repetitive peak reverse voltage

600

V

RMS on-state current (full sine wave)Tj=105℃

4

A

Non-repetitive peak on-state current tp=20ms

35

A

Operating junction temperature

110

℃

Storage temperature

-45~150 ℃

Thermal resistance, junction to case

3

℃/W

Thermal resistance, junction to ambient

60 ℃/W

ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)

SYMBOL

PARAMETER

CONDITIONS

IRRM

IDRM

Repetitive peak reverse current

Repetitive peak off-state current

Ⅰ

VR=VRRM,

VR=VRRM, Tj=125℃

VD=VDRM,

VD=VDRM, Tj=125℃

IGT Gate trigger current

Ⅱ

VD=12V; RL= 33Ω

Ⅲ

Ⅳ

IH

Holding current

IGT= 0.1A, Gate Open

VGT Gate trigger voltage all quadrant VD=12V; RL= 30Ω

VTM On-state voltage

IT= 5A ; tp= 380μs

isc website：www.iscsemi.cn

MAX

0.01

0.5

0.01

0.5

10

UNIT

mA

mA

10

mA

10

25

15 mA

1.3

V

1.5

V

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