BUH51 Просмотр технического описания (PDF) - Motorola => Freescale

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BUH51

SWITCHMODE
NPN Silicon Planar Power Transistor

Motorola => Freescale 

BUH51

TYPICAL SWITCHING CHARACTERISTICS

800

IB1 = IB2

VCC = 15 V

VZ = 300 V

600 LC = 200 µH

400

tc

tc

200

0

0.5

ttffii

TJ = 125°C

TJ = 25°C

tfi

1

1.5

2

2.5

IC, COLLECTOR CURRENT (AMPS)

Figure 14. Inductive Storage Time,

tc & tfi @ IC/IB = 5

1000

IB1 = IB2

VCC = 15 V

800 VZ = 300 V

LC = 200 µH

tc

600

400

200

0

0.5

tfi

1

1.5

2

IC, COLLECTOR CURRENT (AMPS)

TJ = 125°C

TJ = 25°C

2.5

Figure 15. Inductive Storage Time,

tc & tfi @ IC/IB = 10

4

3

IC = 0.8 A

2

IC = 2 A

IB1 = IB2

1

TJ = 125°C

TJ = 25°C

VCC = 15 V

VZ = 300 V

LC = 200 µH

2

4

6

8

10

hFE, FORCED GAIN

Figure 16. Inductive Storage Time

450

400

IBoff = IB2

VCC = 15 V

350 VZ = 300 V

LC = 200 µH

300

250

200

150

100

50

IC = 2 A

TJ = 125°C IC = 0.8 A

TJ = 25°C

0

3

4

5

6

7

8

9

10

hFE, FORCED GAIN

Figure 17. Inductive Fall Time

800

700

600

500

400

300

200

100

3

TJ = 125°C

TJ = 25°C

IC = 2 A

IB1 = IB2

VCC = 15 V

VZ = 300 V

LC = 200 µH

IC = 0.8 A

4

5

6

7

8

9

10

hFE, FORCED GAIN

Figure 18. Inductive Crossover Time

6

Motorola Bipolar Power Transistor Device Data

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