HRW0503A Просмотр технического описания (PDF) - TY Semiconductor

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производитель

HRW0503A

Silicon Schottky Barrier Diode for Rectifying

TY Semiconductor 

Product specification

HRW0503A

Features

Low forward voltage drop and suitable for

high effifiency rectifying.

MPAK package is suittable for high density

surface mounting and high speed assembly.

SOT-23

2.9+0.1

-0.1

0.4+0.1

-0.1

3

1

2

0.95+0.1

-0.1

1.9+0.1

-0.1

Absolute M axim um R atings T a = 25

Param eter

Repetitive peak reverse voltage

Average rectified current

Non-repetitive peak forward surge current

Junction tem perature

Storage tem perature

N o te

1. 50Hz sine wave 1 pulse

Sym bol

VRRM

IO

IFSM (Not e 1)

Tj

T stg

V a lu e

30

500

5

125

-55 to + 125

U n it

V

mA

A

Unit: mm

0.1+0.05

-0.01

1.Base

2.Emitter

3.collector

Electrical Characteristics Ta = 25

P aram eter

Forward voltage

Reverse current

Capacitance

Sym bol

VF

IR

C

Conditions

IF = 500 mA

VR = 30 V

VR = 0 V, f = 1MHz

Min

Typ

Max

Unit

0.55

V

50

A

65

pF

Marking

Marking

S6

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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