BD676 Просмотр технического описания (PDF) - Inchange Semiconductor

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Компоненты Описание

производитель

BD676

Silicon PNP Darligton Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Darligton Power Transistors

Product Specification

BD676/BD678/BD680

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO

Collector-emitter

breakdown voltage

BD676

BD678 IC=-50mA;IB=0

BD680

V(BR)CBO

Collector-base

breakdown voltage

BD676

BD678 IC=-1mA; IE=0

BD680

V(BR)EBO Emitter-base breakdown voltage

IE=-5mA;IC=0

VCEsat Collector-emitter saturation voltage IC=-1.5A; IB=-30mA

VBE(on) Base-emitter on voltage

ICBO

Collector cut-off current

ICEO

Collector cut-off current

IC=-1.5A ; VCE=-3V

VCB=rated BVCEO; IE=0

Ta=100 ℃

VCE=1/2rated BVCEO; IB=0

IEBO

Emitter cut-off current

hFE

DC current gain

VEB=-5V; IC=0

IC=-1.5A ; VCE=-3V

MIN TYP. MAX UNIT

-45

-60

V

-80

-45

-60

V

-80

-5

V

-2.5

V

-2.5

V

-0.2

-2.0

mA

-0.5 mA

-2.0 mA

750

2

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