D5072_ Просмотр технического описания (PDF) - New Jersey Semiconductor
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D5072_ Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25"C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
Vcs(sat) Collector-Emitter Saturation Voltage lc= 4A; IB= 0.8A
VsE(sat) Base-Emitter Saturation Voltage
lc= 4A; IB= 0.8A
ICBO
Collector Cutoff Current
VCB= 800V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V ; lc= 0
hFE
DC Current Gain
lc=1A;VCE=5V
fi
Current-Gain—Bandwidth Product
lc=1A;VCE=10V
VECF
C-E Diode Forward Voltage
tf
Fall Time
IF=5A
lc= 4A , IB1= 0.8A ; IB2= -1 .6A
RL= 50 Q ; Vcc= 200V
KSD5072
MIN TYP. MAX UNIT
5.0
V
1.5
V
10
uA
40
200 mA
8
3
MHz
2.0
V
0.4 u s
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