BDW24A Просмотр технического описания (PDF) - Inchange Semiconductor
Номер в каталоге
Компоненты Описание
производитель
BDW24A Datasheet PDF : 2 Pages
| |||
INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
BDW24/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDW24
V(BR)CEO
Collector-Emitter
Breakdown Voltage
BDW24A
BDW24B
IC= -100mA ;IB=0
BDW24C
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -2A; IB=B -8mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -6A; IB=B -60mA
VBE(sat) Base-Emitter Saturation Voltage
IC= -2A; IB=B -8mA
VBE(on)-1 Base-Emitter On Voltage
VBE(on)-2 Base-Emitter On Voltage
VECF
C-E Diode Forward Voltage
IC= -1A ; VCE= -3V
IC= -6A ; VCE= -3V
IF= -2A
BDW24
VCE= -22V; IB=B 0
ICEO
Collector
Cutoff Current
BDW24A VCE= -30V; IB=B 0
BDW24B VCE= -40V; IB=B 0
BDW24C VCE= -50V; IB=B 0
BDW24 VCB= -45V;IE= 0
ICBO
Collector
Cutoff Current
BDW24A VCB= -60V;IE= 0
BDW24B VCB= -80V;IE= 0
BDW24C VCB= -100V;IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC=0
hFE-1
DC Current Gain
IC= -1A ; VCE= -3V
hFE-2
DC Current Gain
IC= -2A ; VCE= -3V
hFE-3
DC Current Gain
IC= -6A ; VCE= -3V
MIN
-45
-60
-80
-100
TYP.
MAX UNIT
V
-2
V
-3
V
-2.5
V
-2.5
V
-3
V
-1.8
V
-0.5
mA
-0.2
mA
1000
750
100
-2
mA
20000
isc Website：www.iscsemi.cn
2
Share Link: 