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MSARS50S20RX Просмотр технического описания (PDF) - Microsemi Corporation

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Компоненты Описание
производитель
MSARS50S20RX
Microsemi
Microsemi Corporation Microsemi
MSARS50S20RX Datasheet PDF : 2 Pages
1 2
2830 S. Fairview St.
Santa Ana, CA 92704
PH: (714) 979-8220
FAX: (714) 966-5256
MSARS50S20X,Y
MSARS50S20RX,Y
PRELIMINARY Features
passivated mesa structure for very low leakage currents
Epitaxial structure minimizes forward voltage drop
Hermetically sealed, low profile ceramic (MSARS50S20Y and
200 Volts
50 Amps
MSARS50S20RY) or glass (MSARS50S20X and MSARS50S20RX)
surface mount power package
2 µs
Low package inductance
Very low thermal resistance
Available as standard polarity (strap-to-anode, MSARS50S20X, Y) and
reverse polarity (strap-to-cathode: MSARS50S20RX, Y)
LOW VOLTAGE
DROP STANDARD
RECTIFIER
Maximum Ratings @ 25°C (unless otherwise specified)
DESCRIPTION
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current, Tc125°C
Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave
Junction Temperature Range
Storage Temperature Range
Thermal Resistance, Junction to Case:
SYMBOL
VRRM
VRWM
VR
IF(ave)
IFSM
Tj
Tstg
θJC
MAX.
200
200
200
50
375
-65 to +175
-65 to +175
1.0
UNIT
Volts
Volts
Volts
Amps
Amps
°C
°C
°C/W
Mechanical Outline
MSARS50S20Y & RY (Slugger)
MSARS50S20X & RX (X-BODY)
Datasheet# MSC0861

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