MSARS200S10L Просмотр технического описания (PDF) - Microsemi Corporation

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производитель

MSARS200S10L

HIGH CURRENT CAPABILITY & LOW VOLTAGE DROP STANDARD RECOVERY RECTIFIER

Microsemi Corporation 

2830 S. Fairview St.

Santa Ana, CA 92704

PH: (714) 979-8220

FAX: (714) 966-5256

MSARS200S10L

Features

MSARS200S10LR

• passivated mesa structure for very low leakage currents

• Epitaxial structure minimizes forward voltage drop

• Hermetically sealed, low profile ceramic surface mount power package

• Low package inductance

• Very low thermal resistance

• Available as standard polarity (strap-to-anode, MSARS200S10L) and

reverse polarity (strap-to-cathode: MSARS200S10RL)

Maximum Ratings @ 25°C (unless otherwise specified)

DESCRIPTION

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

Average Rectified Forward Current, Tc≤125°C

derating, forward current, Tc≥ 125°C

Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave

Junction Temperature Range

Storage Temperature Range

Thermal Resistance, Junction to Case:

MSARS200S10L

MSARS200S10LR

SYMBOL

VRRM

VRWM

VR

IF(ave)

dIF/dT

IFSM

Tj

Tstg

θJC

100 Volts

200 Amps

HIGH CURRENT

CAPABILITY &

LOW VOLTAGE

DROP STANDARD

RECOVERY

RECTIFIER

MAX.

UNIT

100

Volts

100

Volts

100

Volts

200

Amps

4

750

-55 to +200

-55 to +200

0.20

0.35

Amps/°C

Amps

°C

°C

°C/W

Mechanical Outline

ThinKey™ 3

Datasheet# MSC1037A

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