MMDL914 Просмотр технического описания (PDF) - Willas Electronic Corp.

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MMDL914

200mA Surface Mount Switching Diode - 100V

Willas Electronic Corp. 

WILLAS

200mA Surface Mount Switching Diode - 100V

1.0A SURFACE MOUNT SCHOTTKYSBOADRR-3IE2R3 RPEaCcTkIaFgIEeRS -20V- 200V

SOD-123+ PACKAGE

FM120-M+

THRU

MMDL9F1M41200-M+

Pb Free Product

Features

• B82a0tcΩh process design, excellent power dissipation offers

Package outline

+10 V

better reverse leakage current and thermal resistance.

•

Low

2k

profile surface

mounted

applicat0io.1nµiFn

order

to

optimize bo1a00rdµsHpaceIF.

tr

tp

t

SOD-123H

IF

• Low po0w.1eµr Floss, high efficiency.

10%

• High current capability, low forward voltage drop.

0.146(3.7)

0.130(3.3)

trr

t

0.012(0.3) Typ.

• High surge capability. DUT

50 Ω• GOUuTaPrUdTring for overvoltage protection. 50 Ω INPUT

90%

•PUULlStrEa high-speed switching.

SAMPLING

GE•NESRiAliTcOoRn epitaxial planar chip, metal silOicSoCnILjLuOnScCtOioPnE.

VR

• Lead-free parts meet environmental standards of

INPUT SIGNAL

MIL-STD-19500 /228

• RoHS product for packing code suffix "G"

IR

iR(RE00..C0057)61=((111..48.))0 mA

OUTPUT PULSE

(IF = IR = 10 mA; measured

at iR(REC) = 1.0 mA)

Halogen free product for packing code suffix "H"

Mechanical dNaotteas: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I F ) of 10mA.

• Epoxy : UL94-V0 raNteodtefsla: m2.eInrpeuttaprdualsnet is adjusted so I R(peak) is equal to 10mA.

• Case : Molded plastNico,teSsO: 3D.-t1p2»3tHrr

0.031(0.8) Typ.

,

• Terminals :Plated teFrimgiunraels,1s.oRldeecraobvleepryer TMiImL-eSTEDq-u75iv0alent Test Circuit

Method 2026

0.040(1.0)

0.024(0.6)

0.031(0.8) Typ.

• Polarity : Indicated by cathode band

Dimensions in inches and (millimeters)

• Mounting Position : Any

• Weight : Approximated 0.011 gram

100

10

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

T A = 150°C

Ratings at 25℃ ambient temTpeAr=a8tu5°rCe unless otherwiseTspA =ec–i4fi0e°dC.

1.0

Single phase10half wave, 60Hz, resistive of inductive load.

T A = 125°C

For capacitive load, derate current by 20%

RATINGS

Marking Code

1.0

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

T A = 85°C

T A =SY25M°BCOL FM120-MH FM130-MH 0F.M1 140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH

12

13

14

15

16

18

10

115 120

VRRM

20

30

40

50

6T0A = 55°C 80

100

150

200 V

0.01

VRMS

14

21

28

35

42

56

70

105

140 V

Maximum DC Blocking Voltage

VDC

20

30

40

50

60

80

100

150

200 V

T A = 25°C

Maximum Ave0r.a1ge Forward Rectified Current

IO

0.001

1.0

A

0.2

0.4

0.6

0.8

1.0

1.2

0

10

20

30

40

50

Peak Forward Surge Current V8.3F ,mFsOsiRngWleAhRaDlf sVinOe-LwTaAvGe E (IVFOSMLTS)

superimposed on rated load (JFEDigEuC rmeeth2o.d)Forward Voltage

Typical Thermal Resistance (Note 2)

RΘJA

V R , REVER3S0E VOLTAGE (VOLTS)

A

Figure 3.40Leakage Current

℃

Typical Junction Capacitance (Note 1)

CJ

120

Operating Temperature Range

0.68

TJ

-55 to +125

-55 to +150

Storage Temperature Range

TSTG

- 65 to +175

CHARACTERISTICS

0.64

Maximum Forward Voltage at 1.0A DC

Maximum Average Reverse Current at @T A=25℃

0.60

Rated DC Blocking Voltage

@T A=125℃

SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U

VF

0.50

0.70

0.85

0.9

0.92 V

IR

0.5

m

10

NOTES:

1- Measured at 1 MHZ and applied reverse voltage 0o.f564.0 VDC.

2- Thermal Resistance From Junction to Ambient

0.52

0

0.2

0.4

0.6

0.8

V R , REVERSE VOLTAGE (VOLTS)

Figure 4. Capacitance

2012-06

2012-1

WILLAS ELECTRONIC CORP

WILLAS ELECTRONIC CORP.

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