PXT2907A Просмотр технического описания (PDF) - Galaxy Semi-Conductor

Номер в каталоге

Компоненты Описание

производитель

PXT2907A

PNP General Purpose Amplifier

Galaxy Semi-Conductor 

Production specification

PNP General Purpose Amplifier

PXT2907A

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol Test conditions

MIN MAX UNIT

Collector-base breakdown voltage

V(BR)CBO IC=-10μA IE=0

-60

V

Collector-emitter breakdown voltage V(BR)CEO IC=-10mA IB=0

-60

V

Emitter-base breakdown voltage

V(BR)EBO IE=-10μA IC=0

-5

V

Collector cut-off current

ICBO

VCB=-50V IE=0

-10 nA

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Collector Capacitance

Emitter Capacitance

IEBO

hFE

VCE(sat)

VBE(sat)

fT

CC

Ce

VEB=-5V,IC=0

VCE=-1V IC=-100μA

VCE=-1V IC=-1mA

VCE=-1V IC=-10mA

VCE=-2V IC=-150mA

VCE=-10V IC=-500mA

IC=-150mA IB=-15mA

IC=-500mA IB=-50mA

IC=-150mA IB=-15mA

IC=-500mA IB=-50mA

VCE=-10V,IC=-20mA,

f=100MHz

-50 nA

75 -

100 -

100 -

100 300

50 -

-0.4

V

-1.6

-1.3

V

-2.6

200

MHz

VCB=-10V f=1.0MHz IE=0 -

8

pF

VEB=-0.5V f=1.0MHz IC=0 -

35 pF

Delay time

td

12 ns

Rise time

Storage time

tr

ICon=-150mA,IBon=-15mA

ts

IBoff=-15mA

30 ns

300 ns

Fall time

tf

65 ns

E016

Rev.A

www.gmicroelec.com

2

Share Link: