PXT2907A Просмотр технического описания (PDF) - NXP Semiconductors.
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PXT2907A Datasheet PDF : 15 Pages
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NXP Semiconductors
PXT2907A
60 V, 600 mA, PNP switching transistor
300
hFE
(1)
200
(2)
100
(3)
aaa-013777
-0.8
IC
(A)
-0.6
-0.4
-0.2
aaa-013778
IB = -12 mA -10.8
-9.6
-8.4
-7.2
-6.0
-4.8
-3.6
-2.4
-1.2
0
-10-1
-1
-10
VCE = -2 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
-102
-103
IC (mA)
Fig. 5. DC current gain as a function of collector
current; typical values
-1.2
VBE
(V)
-1.0
aaa-013779
(1)
-0.8
(2)
-0.6
(3)
-0.4
0
0
-2
-4
-6
-8
-10
VCE (V)
Tamb = 25 °C
Fig. 6. Collector current as a function of collector-
emitter voltage; typical values
-1.2
VBEsat
(V)
-1.0
-0.8
-0.6
-0.4
aaa-013780
(1)
(2)
(3)
-0.2
-10-1
-1
-10
VCE = -2 V
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
-102
-103
IC (mA)
Fig. 7. Base-emitter voltage as a function of collector
current; typical values
-0.2
-10-1
-1
-10
IC/IB = 10
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
-102
-103
IC (mA)
Fig. 8. Base-emitter saturation voltage as a function of
collector current; typical values
PXT2907A
Product data sheet
All information provided in this document is subject to legal disclaimers.
3 August 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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