PXT2907A Просмотр технического описания (PDF) - NXP Semiconductors.
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PXT2907A Datasheet PDF : 15 Pages
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NXP Semiconductors
PXT2907A
60 V, 600 mA, PNP switching transistor
10. Characteristics
Table 7.
Symbol
ICBO
IEBO
hFE
VCEsat
VBEsat
td
tr
ton
ts
tf
toff
CC
CE
fT
Characteristics
Parameter
Conditions
collector-base cut-off
current
emitter-base cut-off
current
VCB = -50 V; IE = 0 A; Tamb = 25 °C
VCB = -50 V; IE = 0 A; Tj = 125 °C
VEB = -5 V; IC = 0 A; Tamb = 25 °C
DC current gain
VCE = -1 V; IC = -0.1 mA; Tamb = 25 °C
VCE = -1 V; IC = -1 mA; Tamb = 25 °C
VCE = -1 V; IC = -10 mA; Tamb = 25 °C
VCE = -2 V; IC = -150 mA; Tamb = 25 °C
collector-emitter
saturation voltage
VCE = -10 V; IC = -500 mA;
Tamb = 25 °C
IC = -150 mA; IB = -15 mA;
Tamb = 25 °C
IC = -500 mA; IB = -50 mA;
Tamb = 25 °C
base-emitter saturation IC = -150 mA; IB = -15 mA;
voltage
Tamb = 25 °C
IC = -500 mA; IB = -50 mA;
Tamb = 25 °C
delay time
rise time
IC = -150 mA; IBon = -15 mA;
IBoff = 15 mA; Tamb = 25 °C
turn-on time
storage time
fall time
turn-off time
collector capacitance
VCB = -10 V; IE = 0 A; ie = 0 A;
f = 1 MHz; Tamb = 25 °C
emitter capacitance
transition frequency
VEB = -500 mV; IC = 0 A; ic = 0 A;
f = 1 MHz; Tamb = 25 °C
VCE = -20 V; IC = -50 mA; f = 100 MHz;
Tamb = 25 °C
Min Typ Max Unit
-
-
-10 nA
-
-
-10 µA
-
-
-50 nA
75
-
-
100 -
-
100 -
-
100 -
300
50
-
-
-
-
-400 mV
-
-
-1.6 V
-
-
-1.3 V
-
-
-2.6 V
-
-
12
ns
-
-
30
ns
-
-
40
ns
-
-
300 ns
-
-
65
ns
-
-
365 ns
-
-
8
pF
-
-
35
pF
200 -
-
MHz
PXT2907A
Product data sheet
All information provided in this document is subject to legal disclaimers.
3 August 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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