PXT2907A,115 Просмотр технического описания (PDF) - NXP Semiconductors.
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PXT2907A,115 Datasheet PDF : 15 Pages
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NXP Semiconductors
PXT2907A
60 V, 600 mA, PNP switching transistor
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VCBO
collector-base voltage
open emitter
VCEO
collector-emitter voltage
open base
VEBO
emitter-base voltage
open collector
IC
collector current
ICM
peak collector current
single pulse; tp ≤ 1 ms
IBM
peak base current
Ptot
total power dissipation
Tamb ≤ 25 °C
Tj
Tamb
Tstg
junction temperature
ambient temperature
storage temperature
Min Max Unit
-
-60 V
-
-60 V
-
-5
V
-
-600 mA
-
-800 mA
-
-200 mA
[1]
-
0.5 W
[2]
-
0.8 W
[3]
-
1.1 W
-
150 °C
-65 150 °C
-65 150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 6 cm2.
1600
Ptot
(mW)
1200
(1)
006aaa238
(2)
800
(3)
400
0
- 75
- 25
25
Fig. 1.
(1) FR4 PCB; 6 cm2 mounting pad for collector.
(2) FR4 PCB; 1 cm2 mounting pad for collector.
(3) FR4 PCB; standard footprint.
Power derating curves
75
125
175
Tamb (°C)
PXT2907A
Product data sheet
All information provided in this document is subject to legal disclaimers.
3 August 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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