BT139X Просмотр технического описания (PDF) - NXP Semiconductors.

Номер в каталоге

Компоненты Описание

производитель

BT139X

Triacs

NXP Semiconductors. 

Philips Semiconductors

Triacs

Product specification

BT139X series

DYNAMIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated

SYMBOL PARAMETER

CONDITIONS

MIN.

TYP. MAX. UNIT

BT139X- ... ...F ...G

dVD/dt

Critical rate of rise of

off-state voltage

VDM = 67% VDRM(max);

100 50 200 250

Tj = 125 ˚C; exponential

waveform; gate open

circuit

dVcom/dt Critical rate of change of VDM = 400 V; Tj = 95 ˚C;

-

commutating voltage

IT(RMS) = 16 A;

dIcom/dt = 7.2 A/ms; gate

open circuit

-

10 20

tgt

Gate controlled turn-on ITM = 20 A; VD = VDRM(max); -

-

-

2

time

IG = 0.1 A; dIG/dt = 5 A/µs

- V/µs

- V/µs

-

µs

September 1997

3

Rev 1.200

Share Link: