2N7002T Просмотр технического описания (PDF) - Secos Corporation.
Номер в каталоге
Компоненты Описание
производитель
2N7002T Datasheet PDF : 3 Pages
| |||
Elektronische Bauelemente
2N7002T
N-Channel Enhancement MOSFET
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
CHARACTERISTICS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On Resistance
Forward transfer admittance
Drain-Source On Voltage
Diode Forward Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
SYMBOL MIN TYP MAX UNIT TEST CONDITIONS
V(BR)DSS
60
-
-
V VGS = 0V, ID = 10μA
VGS(th)
1
-
2.5
V VDS= VGS, ID= 250μA
IGSS
-
-
±80 nA VDS= 0V, VGS= ±25V
IDSS
-
-
80
nA VDS = 60V, VGS= 0V
ID(ON)
500 -
-
mA VGS = 10V, VDS = 7V
1
- 7.5
VGS= 10V, ID = 500mA
RDS(ON)
Ω
1
- 7.5
VGS= 5V, ID = 50mA
gfs
VDS(ON)
80
0.5
0.05
-
500 mS VDS= 10V, ID = 200mA
- 3.75
VGS = 10V, ID = 500mA
V
- 0.375
VGS = 5V, ID = 50mA
VSD
0.55 -
1.2
V IS= 115mA, VGS= 0V
Ciss
-
-
50
Coss
-
-
25
pF VDS= 25V, VGS= 0V, f= 1MHz
Crss
-
-
5
SWITCHING TIME
Td(ON)
Td(OFF)
-
-
20
VGEN= 10V, VDD= 25V,
nS ID= 500mA, RG= 25Ω,
-
-
40
RL= 50Ω
http://www.SeCoSGmbH.com/
10-Jun-2010 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 3
Share Link: 