2N7002T Просмотр технического описания (PDF) - Secos Corporation.

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производитель

2N7002T

N-Channel Enhancement MOSFET

Secos Corporation. 

Elektronische Bauelemente

2N7002T

N-Channel Enhancement MOSFET

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

SOT-523

FEATURES

 High density cell design for low RDS(ON).

 Voltage controlled small signal switch.

 Rugged and reliable.

 High saturation current capability.

DEVICE MARKING：K72



Gate



Drain



Source

REF.

A

B

C

D

G

J

Millimeter

Min. Max.

1.50 1.70

0.75 0.95

0.60 0.80

0.23 0.33

0.50BSC

0.10 0.20

REF.

K

M

N

S

Millimeter

Min. Max.

0.30

---

---

011.005oo0

1.50 1.70

MAXIMUM RATINGS (TA=25℃ unless otherwise specified)

PARAMETER

Drain-Source Voltage

Drain Current

Power Dissipation

Operating Junction Temperature Range

Operating Storage Temperature Range

SYMBOL

VDS

ID

PD

TJ

TSTG

RATING

60

115

150

150

-55~150

UNIT

V

mA

mW

°C

°C

http://www.SeCoSGmbH.com/

10-Jun-2010 Rev. B

Any changes of specification will not be informed individually.

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