SI4420DY-T1(2003) Просмотр технического описания (PDF) - Vishay Semiconductors
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SI4420DY-T1 Datasheet PDF : 5 Pages
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Si4420DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.030
On-Resistance vs. Drain Current
5000
0.024
4000
Capacitance
Ciss
0.018
0.012
VGS = 4.5 V
0.006
VGS = 10 V
0.000
0
10
20
30
40
50
ID − Drain Current (A)
Gate Charge
10
VDS = 15 V
ID = 13.5 A
8
3000
2000
1000
Crss
Coss
0
0
4
8
12
16
20
VDS − Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
VGS = 10 V
ID = 13.5 A
1.4
6
1.2
4
1.0
2
0.8
0
0
10
20
30
40
50
60
Qg − Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
50
TJ = 150_C
10
0.6
−50 −25 0
25 50 75 100 125 150
TJ − Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.05
0.04
ID = 13.5 A
0.03
TJ = 25_C
0.02
0.01
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD − Source-to-Drain Voltage (V)
Document Number: 71818
S-31990—Rev. F, 13-Oct-03
0.00
0
2
4
6
8
VGS − Gate-to-Source Voltage (V)
www.vishay.com
3
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