SI4420DY-T1(2003) Просмотр технического описания (PDF) - Vishay Semiconductors
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SI4420DY-T1 Datasheet PDF : 5 Pages
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Si4420DY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 55_C
VDS w 5 V, VGS = 10 V
VGS = 10 V, ID =13.5 A
VGS = 4.5 V, ID = 11 A
VDS = 15 V, ID = 13.5 A
IS = 2.3 A, VGS = 0 V
Gate Charge
Qg
Total Gate Charge
Qgt
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Rg
td(on)
tr
td(off)
tf
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = 15 V, VGS = 5 V, ID = 13.5 A
VDS = 15 V, VGS = 10 V, ID = 13.5 A
VDD = 15 V, RL = 15 W
ID ^ 1 A, VGEN = 10 V, Rg = 6 W
IF = 2.3 A, di/dt = 100 A/ms
Min Typ Max Unit
1.0
2.0
3.0
V
"100
nA
1
mA
5
30
A
0.0075 0.009
W
0.010
0.013
50
S
1.1
V
29
45
58
90
nC
12
9.5
0.5
2.1
4.6
W
22
35
13
20
82
125
ns
30
45
50
75
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
50
50
VGS = 10 thru 4 V
40
40
Transfer Characteristics
30
30
20
10
3V
0
0
1
2
3
4
5
VDS − Drain-to-Source Voltage (V)
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2
20
10
0
0.0
TC = 125_C
25_C
−55_C
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGS − Gate-to-Source Voltage (V)
Document Number: 71818
S-31990—Rev. F, 13-Oct-03
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