SI4420DY-T1(2003) Просмотр технического описания (PDF) - Vishay Semiconductors
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SI4420DY-T1 Datasheet PDF : 5 Pages
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N-Channel 30-V (D-S) MOSFET
Si4420DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.009 @ VGS = 10 V
30
0.013 @ VGS = 4.5 V
ID (A)
13.5
11
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
Top View
Ordering Information: Si4420DY
Si4420DY-T1 (with Tape and Reel)
FEATURES
D TrenchFETr Power MOSFET
D 100% Rg Tested
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 sec
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
30
"20
13.5
9.5
10.8
7.5
50
2.7
1.36
3.0
1.5
1.9
0.95
−55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambienta
t t 10 sec
Steady State
RthJA
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 71818
S-31990—Rev. F, 13-Oct-03
Typical
33
70
16
Maximum
42
84
21
Unit
_C/W
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