2SK1971 Просмотр технического описания (PDF) - Inchange Semiconductor
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2SK1971 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK1971
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
V(BR)GSS Gate-Source Breakdown Voltage
VGS= 0; ID= 10mA
VDS= 0; IG= 100μA
VGS(th) Gate Threshold Voltage
VDS= 10V; ID=1mA
VDF
Body to drain diode forward voltage IF = 35A, VGS = 0
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
VGS= 10V; ID= 18A
VGS= ±25V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 400V; VGS= 0
Ciss Input capacitance
Crss Reverse transfer capacitance
Coss Output capacitance
VDS=10V;VGS=0V;
fT=1MHz
tr
Rise time
ton
Turn-on time
tf
Fall time
VGS=10V;ID=5A;
VDD=200V;
RL=6Ω
toff
Turn-off time
MIN TYPE MAX UNIT
500
V
±20
V
2
3
V
1.1
V
0.19
0.23
Ω
±10
µA
250
µA
4320
130
pF
1120
170
50
ns
130
320
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