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BUV28 Просмотр технического описания (PDF) - New Jersey Semiconductor

Номер в каталоге
Компоненты Описание
производитель
BUV28
NJSEMI
New Jersey Semiconductor NJSEMI
BUV28 Datasheet PDF : 2 Pages
1 2
ELECTRICAL CHARACTERISTICS ( Tc = 25°C unless otherwise noted )
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
( lc= 30 mA , IB=0 )
Collector Cutoff Current
(VCB=300V,IE=0)
Emitter Cutoff Current
V(BR)CEO
200
ICBO
'EBO
ON CHARACTERISTICS (1)
Collector-Emitter Saturation Voltage
( lc* 3.0 A, IB= 300 mA )
( lc= 6.0 A, IB= 600 mA )
Base-Emitter Saturation Voltage
(IC=6.0A, IB= 600mA)
SWITCHING CHARACTERISTICS
Turn-On Time
Storage Time
Fall Time
VCC=150V, lc= 5.0A
IB1=-IM=0.5A
(1) Pulse Test Pulse width ^ 300 us , Duty Cycle 5 2.0%
VCE^
ton
*.
t,
BUV28 NPN
Max
Unit
V
mA
1.0
mA
1.0
V
0.7
1.5
V
2.0
1.0
us
1.5
us
0.3
us

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