1N5818W Просмотр технического описания (PDF) - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

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1N5818W

SCHOTTKY BARRIER RECTIFIERS

DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 

1N5817W THRU 1N5819W

SCHOTTKY BARRIER RECTIFIERS

FEATURES

• Metal silicon junction, majority carrier conduction

• Guarding for overvoltage protection

• Low power loss, high efficiency

• High current capability

• low forward voltage drop

• High surge capability

• For use in low voltage, high frequency inverters,

free wheeling, and polarity protection applications

PINNING

PIN

DESCRIPTION

1

Cathode

2

Anode

1

2

Top View

Marking Code: 1N5817W---12A

1N5818W---13A

1N5819W---14A

Simplified outline SOD-123FL and symbol

MECHANICAL DATA

• Case: SOD-123FL

• Terminals: Solderable per MIL-STD-750, Method 2026

• Approx. Weight:15mg 0.00048oz

Maximum Ratings and Electrical characteristics

Ratings at 25 °C ambient temperature unless otherwise specified.

Parameter

Symbols 1N5817W 1N5818W 1N5819W Units

Maximum Repetitive Peak Reverse Voltage

VRRM

20

30

40

V

Maximum RMS voltage

VRMS

14

21

28

V

Maximum DC Blocking Voltage

VDC

20

30

40

V

Maximum Average Forward Rectified Current

0.375" (9.5 mm) Lead Length at TL = 90°C

I F ( AV )

1

A

Peak Forward Surge Current, 8.3ms Single Half Sine-wave

Superimposed On Rated Load (JEDEC method) at TL = 70°C

IFSM

25

A

Maximum Instantaneous Forward Voltage at 1 A

Maximum Instantaneous Forward Voltage at 3.1 A

Maximum Instantaneous Reverse Current at TA = 25°C

Rated DC Reverse Voltage

TA = 100°C

VF

0.45

0.55

0.6

0.75

0.875

0.9

V

IR

1

10

mA

Typical Junction Capacitance

Cj

110

pF

Storage and Operating Junction Temperature Range

Tj, Tstg

-55 ~ +125

°C

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