1N5818S Просмотр технического описания (PDF) - Shenzhen Luguang Electronic Technology Co., Ltd
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производитель
1N5818S Datasheet PDF : 2 Pages
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1N5817S-1N5819S
Schottky Barrier Rectifiers
Features
Metal-Semiconductor junction with guard ring
Epitaxial construction
Low forward voltage drop,low switching losses
High surge capability
For use in low voltage,high frequency inverters free
xxxx wheeling,and polarity protection applications
The plastic material carries U/L recognition 94V-0
Mechanical Data
Case:JEDEC A--405,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,method 208
Polarity: Color band denotes cathode
Weight: 0.008 ounces,0.23 grams
Mounting position: Any
VOLTAGE RANGE: 20 --- 40 V
CURRENT: 1.0 A
A - 405
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
1N5817S
1N5818S
1N5819S
UNITS
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
VRRM
VRMS
VDC
Maximum average forw ard rectified current
9.5mm lead length,
@TA=75
Peak forw ard surge current
IF(AV)
8.3ms single half-sine-w ave
IFSM
superimposed on rated load @TJ=70
Maximum instantaneous forw ard voltage @ 1.0A
z (Note 1)
@ 3.0A
VF
Maximum reverse current
@TA=25
IR
at rated DC blocking voltage @TA=100
Typical junction capacitance (Note2)
CJ
Typical thermal resistance (Note3)
RθJA
Operating junction temperature range
TJ
Storage temperature range
TSTG
NOTE: 1. Pulse test : 300 s pulse width,1% duty cy cle.
2. Measured at 1.0MHZ and applied rev erse v oltage of 4.0V DC.
3.Thermal resistance junction to ambient
20
14
20
0.45
0.75
30
40
V
21
28
V
30
40
V
1.0
A
25.0
A
0.55
0.875
0.60
V
0.90
1.0
mA
10.0
110
pF
50
／Ｗ
- 55 ---- + 125
- 55 ---- + 150
Revision:20170701-P1
http://www.lgesemi.com
mail:lge@lgesemi.com
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