1N5818 Просмотр технического описания (PDF) - Jiangsu High diode Semiconductor Co., Ltd
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Компоненты Описание
производитель
1N5818 Datasheet PDF : 4 Pages
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Typical Characteristics
FIG.1: FORWARD CURRENT DERATING CURVE
1.0
FIG.2:MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
50
0.8
40
8.3ms Single Half Sine Wave
JEDEC Method
0.6
30
0.4
20
0.2
Single Phase Half Wave 60HZ Resistive or
Inductive Load 0.375''(9.5mm) Lead Length
0
0
50
100
10
150
1
2
10
20
100
Number of Cycles
FIG.3: TYPICAL FORWARD CHARACTERISTICS
20
100
1N5817
10
1N5818-1N5819
10
1.0
1.0
0.1
TJ=25℃
Pulse width=300us
0.01
1% Duty Cycle
0.2
0.1
0.001
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
0
VF(V)
FIG.4: TYPICAL REVERSE CHARACTERISTICS
Tj=125℃
Tj=75℃
Tj=25℃
20
40
60
80
100
Voltage(%)
High Diode Semiconductor
2
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