1N5818 Просмотр технического описания (PDF) - Jiangsu High diode Semiconductor Co., Ltd
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1N5818 Datasheet PDF : 4 Pages
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1N5817 THRU 1N5819
DO-4 1 Plastic-Encapsulate Diodes
Schottky Rectifier
HD ZC28
Features
●Io
1A
●VRRM
20V-40V
●High surge current capability
●Polarity: Color band denotes cathode
DO-4 1
Applications
● Rectifier
Marking
● 1N58XX
XX:From 17 to 19
Item
Symbol Unit
Conditions
17
Repetitive Peak Reverse Voltage VRRM
V
20
Maximum RMS Voltage
VRMS
V
14
Average Forward Current
IF(AV)
A
60Hz Half-sine wave, Resistance
load, Ta=75℃
Surge(Non-repetitive)Forward
Current
IFSM
A
60Hz Half-sine wave,1 cycle,
Ta=25℃
Junction Temperature
TJ
℃
Storage Temperature
TSTG
℃
1N58
18
19
30
40
21
28
1.0
30
-55~+125
-55 ~ +150
Electrical Characteristics (Ta=25℃ Unless otherwise specified）
Item
Symbol Unit
Test Condition
1N58
17
18
19
Peak Forward
Voltage
VFM
V
IFM=1.0A
0.45
0.55
0.6
Peak Reverse
Current
IRRM1
IRRM2
mA
VRM=VRRM
Ta=25℃
Ta=125℃
1.0
10
Thermal
Resistance(Typical)
RθJ-A
RθJ-L
℃/W
Between junction and ambient
Between junction and lead
50
15
High Diode Semiconductor
1
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