1N5818RL_11 Просмотр технического описания (PDF) - STMicroelectronics
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1N5818RL_11 Datasheet PDF : 7 Pages
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Characteristics
1
Characteristics
1N5817, 1N5818, 1N5819
Table 2. Absolute ratings (limiting values)
Symbol
Parameter
Value
Unit
1N5817 1N5818 1N5819
VRRM Repetitive peak reverse voltage
20
30
40
IF(RMS) Forward rms current
10
IF(AV)
Average forward
current
TL = 125 °C, δ = 0.5
1
IFSM
Surge non repetitive
forward current
tp = 10 ms Sinusoidal
25
PARM
Repetitive peak
avalanche power
tp = 1 µs, Tj = 25 °C
1200 1200
900
Tstg Storage temperature range
Tj Maximum operating junction temperature(1)
-65 to + 150
150
dV/dt Critical rate of rise of reverse voltage
10000
1.
dPtot
dTj
<1
Rth(j-a)
condition to avoid thermal runaway for a diode on its own heatsink.
Table 3. Thermal resistances
Symbol
Parameter
Value
V
A
A
A
W
°C
°C
V/µs
Unit
Rth (j-a) Junction to ambient
Rth (j-l) Junction to lead
Lead length = 10 mm
Lead length = 10 mm
100
°C/W
45
°C/W
Table 4.
Symbol
Static electrical characteristics
Parameter
Tests conditions
1N5817 1N5818 1N5819 Unit
IR (1)
Reverse leakage
current
Tj = 25 °C
0.5
VR = VRRM
Tj = 100 °C
10
0.5
10
0.5
mA
10
mA
VF (1)
Tj = 25 °C IF = 1 A
Forward voltage drop
Tj = 25 °C IF = 3 A
0.45
0.50
0.55
0.75
0.80
0.85
V
V
1. Pulse test : tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equations :
P
P
=
=
0.3
0.3
x
x
IF(AV)
IF(AV)
+
+
0.090
0.150
IIFF22((RRMMSS
)
)
for
for
1N5817
1N5819
/
1N5818
2/7
Doc ID 6262 Rev 5
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