1N5818 Просмотр технического описания (PDF) - Semtech Electronics LTD.

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производитель

1N5818

SCHOTTKY BARRIER RECTIFIERS

Semtech Electronics LTD. 

1N5817 THRU 1N5819

SCHOTTKY BARRIER RECTIFIERS

Features

• Metal silicon junction, majority carrier conduction

• Guarding for overvoltage protection

• Low power loss, high efficiency

• High current capability

• low forward voltage drop

• High surge capability

• For use in low voltage, high frequency inverters,

free wheeling, and polarity protection applications

Mechanical Data

• Case: Molded plastic, DO-41

Dimensions in mm

Maximum Ratings and Electrical Characteristics

Ratings at 25 OC ambient temperature unless otherwise specified.

Parameter

Symbols

Maximum Repetitive Peak Reverse Voltage

VRRM

Maximum RMS voltage

VRMS

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current

0.375" (9.5 mm) Lead Length at TL = 90 OC

Peak Forward Surge Current, 8.3ms Single Half Sine-wave

Superimposed On Rated Load (JEDEC method) at TL = 70 OC

Maximum Instantaneous Forward Voltage at 1 A

Maximum Instantaneous Forward Voltage at 3.1 A

Maximum Instantaneous Reverse Current at

Rated DC Reverse Voltage

TA = 25 OC

TA = 100 OC

Typical Thermal Resistance

Typical Junction Capacitance

Storage and Operating Junction Temperature Range

VDC

I(AV)

IFSM

VF

IR

RθJA

RθJL

CJ

Tj ,Tstg

1N5817

20

14

20

1N5818

30

21

30

1N5819

40

28

40

1

25

0.45

0.55

0.6

0.75

0.875

0.9

1

10

50

15

110

- 65 to + 125

Units

V

V

V

A

A

V

mA

OC/W

pF

OC

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

®

Dated : 11/11/2008

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