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BYT30P-1000(1994) Просмотр технического описания (PDF) - STMicroelectronics

Номер в каталоге
Компоненты Описание
производитель
BYT30P-1000
(Rev.:1994)
ST-Microelectronics
STMicroelectronics ST-Microelectronics
BYT30P-1000 Datasheet PDF : 5 Pages
1 2 3 4 5
BYT 30P-1000
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Synbol
IR
VF
Tj = 25°C
Tj = 100°C
Tj = 25°C
Tj = 100°C
Test Conditions
VR = VRRM
IF = 30A
Min. Typ. Max. Unit
100 µA
5 mA
1.9
V
1.8
RECOVERY CHARACTERISTICS
Symbol
Test Conditions
trr
Tj = 25°C
IF = 1A
IF = 0.5A
diF/dt = - 15A/µs
IR = 1A
VR = 30V
Irr = 0.25A
Min. Typ. Max. Unit
165 ns
70
TURN-OFF SWITCHING CHARACTERISTICS (Without Series Inductance)
Symbol
tIRM
IRM
diF/dt = - 120A/µs
diF/dt = - 240A/µs
diF/dt = -120A/µs
diF/dt = - 240A/µs
Test Conditions
VCC = 200 V IF = 30A
Lp 0.05µH Tj = 100°C
See figure 11
Min. Typ. Max. Unit
200 ns
120
19.5 A
22
TURN-OFF OVERVOLTAGE COEFFICIENT (With Series Inductance)
Symbol
C = VRP
VCC
Tj = 100°C
diF/dt = - 30A/µs
Test Conditions
VCC = 200V
Lp = 5µH
IF = IF (AV)
See figure 12
Min. Typ. Max. Unit
4.5
To evaluate the conduction losses use the following equation:
VF = 1.47 + 0.010 IF
P = 1.47 x IF(AV) + 0.010 IF2(RMS)
Figure 1. Low frequency power losses versus
average current
Figure 2. Peak current versus form factor
2/5

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