BC372 Просмотр технического описания (PDF) - New Jersey Semiconductor
Номер в каталоге
Компоненты Описание
производитель
BC372 Datasheet PDF : 3 Pages
| |||
BC372, BC373
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector- Emitter Breakdown Voltage*1)
(lc = 100uAdc, IB = 0)
V(BR)CES
BC372
100
BC373
80
_
Vdc
_
Collector -Base Breakdown Voltage
(lc = 100uAdc, IE = 0)
V(BR)CBO
Vdc
BC372
100
-
BC373
80
_
Emitter- Base Breakdown Voltage
(IE = 10 uAdc, lc = 0)
V(BR)EBO
12
-
-
Vdc
Collector Cutoff Current
(VCB = 80 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0)
Emitter Cutoff Current
(VEB=10V, lc = 0)
BC372
BC373
'CBO
!EBO
nAdc
100
_
_
100
~
-
100
riAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(lc = 250 mAdc, VCE = 5.0 Vdc)
(lc = 100 mAdc, VCE = 5.0 Vdc)
Collector -Emitter Saturation Voltage
(lc = 250 mAdc, IB = 0.25 mAdc)
Base - Emitter Saturation Voltage
(lc = 250 mAdc, IB = 0.25 mAdc)
"RE
K
8.0
-
-
10
-
160
VcE(sat)
-
1.0
1.1
Vdc
VBE(sat)
-
1.4
2.0
Vdc
DYNAMIC CHARACTERISTICS
Current-Gain Bandwidth Product
(lc = 100 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
fT
100
200
-
MHz
Output Capacitance
(VCB = 1 0 Vdc, IE = 0, f = 1 .0 MHz)
Cob
-
10
25
PF
Noise Figure
(lc = 1 .0 mAdc, VCE = 5.0 Vdc, Rg = 1 00 kQ, f = 1 .0 kHz)
1. Pulse Test: Pulse Width = 300 us, Duty Cycle 2.0%.
NF
-
20
-
dB
Share Link: 