2SD1609 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
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2SD1609 Datasheet PDF : 6 Pages
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2SD1609, 2SD1610
Silicon NPN Epitaxial
Application
Low frequency high voltage amplifier complementary pair with 2SB1109 and 2SB1110
Outline
TO-126 MOD
123
1. Emitter
2. Collector
3. Base
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
2SD1609
2SD1610
Unit
160
200
V
160
200
V
5
5
V
100
100
mA
1.25
1.25
W
150
150
°C
–45 to +150
–45 to +150
°C
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