FDP10N60ZU Просмотр технического описания (PDF) - Fairchild Semiconductor
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производитель
FDP10N60ZU Datasheet PDF : 9 Pages
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Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperaure
1.2
1.1
1.0
0.9
0.8
-100
* Notes :
1. VGS = 0V
2. ID = 250μA
-50
0
50 100 150 200
TJ, Junction Temperature [oC]
Figure 9. Maximum Drain Current
vs. Case Temperature
10
Figure 8. Maximum Safe Operating Area
- FDPF10N60ZUT
100
20μs
100μs
10
1ms
10ms
1
Operation in This Area
is Limited by R DS(on)
DC
0.1
0.01
1
* Notes :
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
10
100
VDS, Drain-Source Voltage [V]
1000
8
6
4
2
0
25
50
75
100
125
150
TC, Case Temperature [oC]
Figure 10. Transient Thermal Response Curve - FDPF10N60ZUT
5
0.5
1
0.2
0.1
0.05
0.1 0.02
0.01
Single pulse
0.01
10-4
10-3
PDM
t1
t2
* Notes :
1. ZθJC(t) = 3.0oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZθJC(t)
10-2
10-1
1
10
102
103
Rectangular Pulse Duration [sec]
FDP10N60ZU/FDPF10N60ZUT Rev. C0
4
www.fairchildsemi.com
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