DB101 Просмотр технического описания (PDF) - Willas Electronic Corp.

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Компоненты Описание

производитель

DB101

SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER

Willas Electronic Corp. 

WILLAS

FM

T

1.0A SURFACREAMTINOGUANNTDSCCHHAORATCTTKEYRIBSTAICRRCUIERRVERSE(CDTBI1F0I1ETRHSR-U2D0VB1-0270)0V

FM1

SOD-123+ PACKAGE

Pb Fr

FIG. 1 - MAXIMUM NON-REPETITIVE FORWARD

Features SURGE CURRENT

• B6a0tch process design, excellent power dissipation offers 1.0

better reverse leakage current and thermal resistance.

• Low profile surface mounted application in order to

o5p0timize board space.

8.3ms Single Half Sine-Wave

• Low power loss, hig(hJEeDfEfDicMieethnocd)y.

• H4i0gh current capability, low forward voltage drop.

• High surge capability.

FIG. 2 - TYPICAL FORWARD CURRENT

PackaDgEeRAToINuGtClUiRnVeE

SOD-123H

0.146(3.7)

0.130(3.3)

0.012(0.3) T

• Guardring for overvoltage protection.

• U3l0tra high-speed switching.

.5

• Silicon epitaxial planar chip, metal silicon junction.

0.071(1.8)

0.056(1.4)

• L2e0ad-free parts meet environmental standards of

MIL-STD-19500 /228

• RoHS product for packing code suffix "G"

H1a0logen free product for packing code suffix "H"

Single Phase Half Wave

60Hz Inductive or

Resistive Load

Mechanical data

• Ep0 oxy : UL94-V0 rated flame retardant

0

0 2 4 6 10 20 40 60 100

20

• Case : MoNldUeMdBpElRasOtFicC, YSCOLDES-1A2T36H0Hz

,

• Terminals :Plated terminals, solderable per MIL-STD-750

40 60 80 100 120

0A.0M31B(0I.E8)NTyTp.TEMPERATURE, (

0.040(1.0)

0.024(0.6)

140 150

)

0.031(0.8)

Method 2026

• Polarity : Indicated by cathode band

Dimensions in inches and (millimeters)

• Mounting Position : Any

• Weight : Approximated 0.011 gram

FIG. 3 - TYPICAL INSTANTANEOUS FORWARD

FIG. 4 - TYPICAL REVERSE

MAXIMCUHMARRACATTERINISGTICSSAND ELECTRICAL CHARACTERISTICCSHARACTERISTICS

Ratings at1205℃ ambient temperature unless otherwise specified.

10

Single phase half wave, 60Hz, resistive of inductive load.

For capacitive loP1a%uldsDe,uWtdyidCetyhrc=ale3t0e0ucs urrent by 20%

Marking Co1d.0e

RATINGS

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

TJ = 25

0.1

Maximum Average Forward Rectified Current

SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM11

12

113.0

14

15

16

18

10

11

VRRM

20

30

40

50

60

80

100

15

VRMS

14

21

28

35

42

56

70

10

VDC

20

30

40

50 TJ =6205

80

100

15

0.1

IO

1.0

Peak Forward Surge Current 8.3 ms single half sine-wave IFSM

30

superimposed on rated load (JEDEC method)

Typical The.0rm1 al Resistance (Note 2)

Typical Juncti.o4n CapaI.cN6iStaTnAcNeT(.AN8NotEeO1U)S1.0FORWA1R.2D

Operating Temperature RangVeOLTAGE, (V)

Storage Temperature Range

RΘJA

1.4CJ

TJ

TSTG

.01

0 20

-55 to +125

40

40 60

PERCENT

OF

R80A1T2E0D10P0EAK120

140

REVERSE VOLTAGE, (%) -55 to +150

- 65 to +175

2012.10 CHARACTERISTICS

Maximum Forward Voltage at 1.0A DC

WILLAS ELECTRONIC CORP.

SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM115

VF

0.50

0.70

0.85

0.

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