2SD1047 Просмотр технического описания (PDF) - Foshan Blue Rocket Electronics Co.,Ltd.

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Компоненты Описание

производитель

2SD1047

Silicon NPN transistor in a TO-3P Plastic Package

Foshan Blue Rocket Electronics Co.,Ltd. 

2SD1047

Rev.E Mar.-2016

极限参数 / Absolute Maximum Ratings(Ta=25℃)

参数

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current - Continuous

Base Current

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

符号

Symbol

VCBO

VCEO

VEBO

IC

ICP

PC(TC=25℃ )

Tj

Tstg

DATA SHEET

数值

Rating

160

140

6

12

15

100

150

-40～150

单位

Unit

V

V

V

A

A

W

℃

℃

电性能参数 / Electrical Characteristics(Ta=25℃)

参数

Parameter

Collector to Emitter Breakdown

Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

DC Current Gain

Collector to Emitter Saturation

Voltage

Base to Emitter Voltage

Transition Frequency

Collector Output Capacitance

Turn-On Time

Full Time

Storage Time

符号

Symbol

VCEO

ICBO

IEBO

hFE(1)

hFE(2)

VCE(sat)

VBE

fT

Cob

Ton

tf

tstg

测试条件

Test Conditions

IC=50mA IB=0

VCB=80V

VEB=4.0V

VCE=5.0V

VCE=5.0V

IE=0

IC=0

IC=1.0A

IC=6.0A

IC=6.0A

IB=0.6A

VCE=5.0V

VCE=5.0V

f=1.0MHz

VCB=10V

f=1.0MHz

IC=5.0A

IC=1.0A

IE=0

10IB1=-10IB2=IC=1A

10IB1=-10IB2=IC=1A

10IB1=-10IB2=IC=1A

最小值 典型值 最大值 单位

Min Typ Max Unit

140

V

0.1 mA

0.1 mA

80

160

20

0.6

2.5 V

1.5 V

15

MHz

210

pF

0.26

μs

0.68

μs

6.88

μs

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